Abstract: A 1200-V/100-mΩ silicon carbide (SiC) junction field-effect-transistor (JFET)/ gallium nitride (GaN) high-electron-mobility-transistor (HEMT) hybrid power switch is demonstrated, which ...
If you ignore power devices, it is not often that a new discrete semiconductor is announced, but today is one of those days – albeit for a lamented former low-noise n-channel JFET. “When NXP ...
Abstract: In special applications such as reactor in-core detection and deep space exploration missions, nuclear detection systems must contend with high-temperature environments. The temperature ...
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The Minnesota-based provider has faced a number of probes in recent years, primarily connected to its participation in the Medicare program. Ryan Seacrest Breaks Down as He Shares an Emotional Family ...
onsemi’s SiC JFET technology offers an advanced solution that addresses both safety and performance challenges in today’s high-voltage environments. In modern data centers, the evolution toward higher ...
Enabling the next generation of solid-state power distribution systems, Infineon Technologies has announced that it is expanding its silicon carbide (SiC) portfolio with the new CoolSiC JFET product ...
As the universe of applications for power devices grows, designers are finding that no single semiconductor can cover the full range of voltage and current requirements. Instead, combination circuits ...
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