Abstract: This article presents observations of silicon carbide (SiC) damage related to single-event gate oxide damage in SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) subjected to ...
Analysis of Single-Event Leakage Current Degradation Induced by Heavy-Ion Irradiation in SiC MOSFETs
Abstract: The application of silicon carbide MOSFETs (SiC MOSFETs) in space is severely restricted by single-event burnout (SEB) and single-event leakage current (SELC) induced by heavy ions, yet the ...
Forbes contributors publish independent expert analyses and insights. Dr. Lance B. Eliot is a world-renowned AI scientist and consultant. In today’s column, I examine whether there are discernible ...
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