Abstract: A silicon carbide shielded fin-shaped gate metal-oxide-semiconductor field effect transistor (SF-MOS) is proposed in this letter, which utilizes a well-grounded p-region to shield the ...
Abstract: In this paper, a new class of shielded half-mode substrate integrated waveguide (SD-HMSIW) and shielded quarter-mode substrate integrated waveguide (SD-QMSIW) filtering power dividers (FPDs) ...
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