A new technical paper titled “A Cryogenic Ultra-Thin Body SiGeSn Transistor” was published by researchers at TU Wien, ...
A review paper by scientists at Beijing Institute of Graphic Communication presented a thorough review of the existing ...
Released every 12 to 18 months, 3D NAND scaling outpaces most other semiconductor devices in replacement rate and performance ...
Abstract: A novel CMOS-compatible artificial optoelectronic synapse with combing a photodiode-body-biased MOSFET (PD-MOS) with a floating-gate Transistor (FGT) is proposed. The PD-FGT exhibits a broad ...
Abstract: This work introduces a novel force sensor incorporating zinc oxide nanowires (ZnO NWs) synthesized via low temperature hydrothermal methods and integrated with foundry-produced CMOS at ...
The relentless advancement of artificial intelligence (AI) across sectors such as healthcare, the automotive industry, and social media necessitates the development of more efficient hardware ...
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